Low Temperature Process for Polysilazane Oxidation/Densification
AssigneeMicron Technology, Inc.
InventorsJanos Fucsko, John A. Smythe, III, Li Li, Grady S. Waldo
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Abstract
Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet oxidation at low temperature to chemically modify the polysilazane material to a silicon oxide layer.
Claims25
A method of forming a silicon oxide material, comprising:
- wet oxidizing a polysilazane material at a temperature of less than about 100° C. to produce the silicon oxide material having an etch rate of less than about 200 Å/minute in a fluoride etchant.
A method of forming a silicon oxide material, comprising:
- wet oxidizing a polysilazane material at a temperature of less than about 100° C. to produce the silicon oxide material having an oxygen-rich surface and a decreasing oxygen profile thereafter, and an etch rate of less than about 200 Å/minute in a fluoride etchant.
7 The method of claim 5, where the oxygen-rich surface extends to a depth up to about 150 nm.
A method of forming a silicon oxide material, comprising:
- wet oxidizing a polysilazane material at a temperature of less than 100° C. to produce the silicon oxide material having an etch rate in a fluoride etchant of less than about 200 Å/minute, and an oxygen-rich surface with at least about 80% of N and H moieties replaced by oxygen as determined by XPS% atomic analysis or SIMS profiling analysis.
A method of forming a silicon oxide material, comprising:
- applying a water solution to a polysilazane material to wet oxidize said polysilazane material to form a silicon oxide material having an etch rate of less than about 200 Å/minute in a fluoride etchant.
A method of forming an oxide material, comprising:
- wet oxidizing a thickness of a polysilazane material to produce an oxygen-rich surface portion and a decreasing oxygen content thereafter;
- removing a thickness of said oxygen-rich surface portion of the oxide material;
- and
- wet oxidizing an additional thickness of the polysilazane material to increase the thickness of the oxygen-rich surface portion.
A wet-oxidized polysilazane-based oxide material having an etch rate in a fluoride etch solution of less than about 200 Å/minute.
A polysilazane-based oxide material, having an oxygen-rich surface and a decreasing oxygen profile thereafter and an etch rate in a fluoride etchant of less than about 200 Å/minute, the oxygen-rich surface comprising less than 20% N and H moieties.
Dependencies are inferred from the claim text.