Systems and Methods for Writing to a Memory

A resistive random access memory device, comprising:

• a plurality of memory segments each comprising at least one memory cell including a resistivity changing material that requires less time to be reset in a first resistive state than to be set in a second resistive state, wherein an erased memory segment includes no memory cells in the first resistive state and a programmed memory segment includes at least one memory cell in the first resistive state;
• and
• a controller configured to control programming and erasing of memory segments, the controller being configured to map an external memory address of write data to an internal memory address of an erased memory segment such that the erased memory segment is programmed with the write data,
• wherein, in response to a write access for an external memory address previously mapped to a first internal memory address of a programmed memory segment, the controller remaps the external memory address to a second internal memory address of an erased memory segment, the controller being configured to control erasure of the programmed memory segment associated with the first internal memory address.

A system, comprising:

• a host;
• and
• a memory device communicatively coupled to the host, the memory device comprising:
• a plurality of memory segments each comprising at least one memory cell that is configurable in at least first and second states to store data, wherein an
• erased memory segment includes no memory cells in the first state and a programmed memory segment includes at least one memory cell in the first state;
• and
• a controller configured to control programming and erasing of memory segments, wherein the controller is configured to identify programmed memory segments to be erased and to control selective erasure of the identified programmed memory segments.

A method of writing data to a memory device with a memory cell array comprising memory segments, wherein a memory segment that includes no memory cells in a first state is erased, and a memory segment that includes at least one memory cell in the first state is programmed, the method comprising:

• receiving a write access command for writing data associated with an external memory address to the memory device;
• in the event the external memory address is not assigned to an internal memory address of the memory device:
• mapping the external memory address to the internal memory address of a memory segment that is erased, and writing the data to the memory segment;
• and
• in the event the external memory address is mapped to an internal memory address of a first memory segment that is programmed:
• remapping the external memory address to an internal memory address of a second memory segment that is erased;
• writing the data to the second memory segment;
• and erasing the first memory segment.