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US 2009/0268528 A1Published application
Semiconductor memory device and access method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsDae-Hyun Kim, Kwang-il Park, Kyoung-Ho Kim, Hyun-Jin Kim, Hye-Ran Kim
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Abstract
Example embodiments provide a semiconductor memory device that may include: a cell array arranged in pluralities of rows and columns; and a sense amplifier conducting writing and reading operations to the cell array in response to writing and reading commands in correspondence with an access time, which may be variable in period. The sense amplifier adjusts pulse widths of write-in and read-out data in accordance with a period of the access time.
Claims23
A semiconductor memory device comprising:
- a cell array arranged in pluralities of rows and columns;
- and
- a sense amplifier configured to conduct writing and reading operations for the cell array in response to writing and reading commands in correspondence with a first access time, the access time having a variable period,
- wherein the sense amplifier adjusts pulse widths of write-in and read-out data in accordance with the period of the first access time.
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Dependencies are inferred from the claim text.