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AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorAlexander M. Zeltser
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A method in one embodiment includes forming a first layer of magnesium above at least one of a free layer and a reference layer; exposing the first layer of magnesium to an oxidizing environment for causing oxidation of the first layer of magnesium; forming a second layer of magnesium above the oxidized first layer of magnesium; and exposing the second layer of magnesium to the oxidizing environment for causing oxidation of the second layer of magnesium. A system in one embodiment includes a free layer; and a tunnel barrier layer having microstructure and composition characteristic of in situ natural oxidation of magnesium. Additional systems and methods are also presented.
A method, comprising:
A method as recited in claim 5, further comprising forming a second layer of magnesium above the oxidized first layer of magnesium and the layer of magnesium oxide formed by reactive deposition, and exposing the second layer of magnesium to an oxidizing environment for causing oxidation of the second layer of magnesium.
A method as recited in claim 6, further comprising removing the oxidizing environment from a vicinity of the first layer prior to forming the layer of magnesium oxide by reactive deposition.
A method, comprising:
A system, comprising:
Dependencies are inferred from the claim text.