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AssigneeNXP B.V.
InventorsStephane Morel, Arnoldus Den Dekker, Elisabeth C. Rodenburg, Eric C. E. Van Grunsven
Estimating the term…
An integrated circuit (100) is provided that comprises a substrate (140) of silicon and an interconnect (130) in a through-hole extending from the first to the second side of the substrate. The interconnect is coupled to a metallisation layer (120) on the first side of the substrate and is provided on an amorphous silicon layer that is present at a side wall of the through-hole, and particularly at an edge thereof adjacent to the first side of the substrate. The interconnect comprises a metal stack of nickel and silver. A preferred way of forming the amorphous silicon layer is a sputter etching technique.
A method of manufacturing an integrated circuit comprising a substrate of semiconductor material with a first and an opposite second side, comprising the steps of:
An integrated circuit comprising a substrate of semiconductor material with a first and an opposite second side, on which first side a metallisation layer is present, while a through-hole with a side wall extends from the first to the second side of the substrate, on which side wall an electrically conductive layer is present to form an interconnect, which interconnect is coupled to the metallisation layer on the first side of the substrate,
Dependencies are inferred from the claim text.