Through-substrate power-conducting via with embedded capacitance

5-8. (canceled)

An apparatus, comprising:

• a semiconductor substrate that is at least two hundred and fifty microns thick, at least one inch wide, and at least two inches long, the semiconductor substrate having a first substantially planar major surface in a first plane, and having a second substantially planar major surface in a second plane, wherein the semiconductor substrate includes an amount of single-crystal semiconductor material;
• and
• means for conducting a voltage supply current from a first power conductor disposed on a second side of the semiconductor substrate, through the substrate from the second surface to the first surface, and to a second power conductor disposed on a first side of the semiconductor substrate opposite the second side, and for conducting a ground current from a second ground conductor disposed on the first side of the semiconductor substrate, through the semiconductor substrate, and to a first ground conductor disposed on the second side of the semiconductor substrate, wherein the means provides a capacitance between the first power conductor and the first ground conductor of at least 1.2 microfarads, wherein the means is disposed substantially entirely between the first plane and the second plane.

12-21. (canceled)

An apparatus comprising:

• a first set of capacitive vias coupling a supply voltage from a power conductor on a second side of a semiconductor substrate, through the semiconductor substrate, and to an integrated circuit disposed on a first side of the semiconductor substrate, wherein the semiconductor substrate is at least two hundred and fifty microns thick and includes an amount of single-crystal semiconductor material;
• and
• a second set of capacitive vias sinking current from the integrated circuit on the first side of the semiconductor substrate, through the semiconductor substrate, and to a ground conductor on the second side of the semiconductor substrate, wherein each via of the first and second sets involves a pair of coaxial tubes of metal, wherein one of the tubes is separated from the other by a layer of dielectric, and wherein each via has a capacitance of at least one picofarad.