Method of increasing the quality factor of an inductor in a seimiconductor device
AssigneeNXP B.V.
InventorSebastien Jacqueline
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Abstract
A method of fabricating an inductor (70) in a silicon substrate (10), wherein an Argon implantation step (84) is performed after the resist layer (82) has been deposited and the polysilicon layer (30) has been etched, but before the resist layer (82) is stripped and the polysilicon annealed. Thus, an amorphous layer (86) is created on the substrate (10) so as to improve the Q factor of the inductor (70), without the need for an additional masking step or adverse impact on the polysilicon layer (30).
Claims12
A method of fabricating an integrated circuit carrying at least one passive component, the method comprising providing a semiconductor substrate on which may be formed a passive component, depositing a layer of conductive material on said substrate, providing on said layer a patterned resist layer and etching said layer, performing an ion implantation step so as to create an amorphous layer on said substrate in the areas thereof not covered by said etched polysilicon layer and, after said ion implantation step, removing said resist layer.
Dependencies are inferred from the claim text.