Semiconductor device and manufacturing method thereof
AssigneePanasonic Corporation
InventorsTakashi Miyake, Hiroyuki Doi
Life of this patent
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Abstract
A semiconductor device with a fuse 3a to be cut for a circuit modification, of which passivation film coating the uppermost wiring layer is formed in a two-layer structure including a first insulating film 11 with high filling capability and a second insulating film 12 blocking penetration of moisture or impurities. An opening 21 formed in a specific depth through the insulating films on the fuse 3a is coated by a third insulating film 13 with the blocking capability. This prevents the penetration of moisture or impurities, and the corrosion of the fuse 3a.
Claims21
1-13. (canceled)
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) forming an interlayer insulator in which a first wiring layer including a fuse is provided;
- (b) forming a second wiring layer including a wiring on the interlayer insulator;
- (c) forming a first insulating film so as to coat the wiring;
- (d) forming a second insulating film so as to coat the first insulating film;
- (e) forming an opening above the fuse by etching the first and second insulating films;
- and
- (f) forming a third insulating film so as to coat at least the opening.
A semiconductor device, comprising:
- a interlayer insulator in which a first wiring layer including a fuse is provided;
- a second wiring layer including a wiring formed on the interlayer insulator;
- a first insulating film formed on the wiring;
- a second insulating film formed on the first insulating film;
- an opening formed above the fuse;
- and
- a third insulating film coating at least the opening.
Dependencies are inferred from the claim text.