Back to results
US 2009/0267162 A1Published application
Method of manufacturing semiconductor device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKazuaki Nakajima
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device comprises: forming a gate insulator on a substrate, the gate insulator including a high-dielectric film in whole or part; forming a first metal film on the gate insulator; forming a second metal film on the first metal film; and forming a reaction film between the gate insulator and the first metal film by letting the high-dielectric film and the first metal film react with each other through a thermal treatment.
Claims18
A method of manufacturing a semiconductor device comprising:
- forming a gate insulator on a substrate, the gate insulator including a high-dielectric film in whole or part;
- forming a first metal film on the gate insulator;
- forming a second metal film on the first metal film;
- and
- forming a reaction film between the gate insulator and the first metal film by letting the high-dielectric film and the first metal film react with each other through a thermal treatment.
2 more elements
A semiconductor device comprising:
- a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part;
- a reaction film including a first metal on the gate insulator;
- and
- a metal film including a second metal, which is the same as the first metal or congeneric to the first metal, on the reaction film.
1 more element
A semiconductor device comprising:
- a gate insulator formed on a substrate, the gate insulator including a high-dielectric film in whole or part;
- a reaction film formed as a result of thermal reaction between at least a part of the high-dielectric film and a first metal;
- and
- a metal film including a second metal on the reaction film.
1 more element
Dependencies are inferred from the claim text.