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US 2009/0267122 A1Published application
Semiconductor device and method of manufacturing the semiconductor device
AssigneesNational University Corporation Tohoku University, Foundation for Advancement of International Science
InventorsTadahiro Ohmi, Ichiro Takahashi
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Abstract
A semiconductor device has a substrate, an insulator, an yttrium oxide film, a ferroelectric film (STN film), and an upper electrode.
Claims29
A semiconductor device, comprising:
- a ferroelectric film that is formed from a ferroelectric material containing Sr, Ta, and Nb as its main components, on a base film that contains yttrium oxide;
- and
- a conductive electrode is placed directly on or indirectly above the ferroelectric film.
A method of manufacturing a semiconductor device comprising:
- the step (a) of forming a ferroelectric film containing Sr, Ta, and Nb as its main components on a base film that contains yttrium oxide.
Dependencies are inferred from the claim text.