Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a gate electrode over a silicon substrate;
• forming a first sidewall insulating film on a side wall of the gate electrode;
• forming a first semiconductor layer for applying a first stress in a first direction parallel to a surface of the silicon substrate on the silicon substrate in a region where the silicon substrate is not covered by the gate electrode and the first sidewall insulating film;
• forming a second sidewall insulating film on the side wall of the gate electrode with the first sidewall insulating film formed on;
• etching the first semiconductor layer and the silicon substrate with the gate electrode, the first sidewall insulating film and the second sidewall insulating film as the mask to thereby remove the first semiconductor layer in a region where the second sidewall insulating film is not formed and form a trench in the silicon substrate;
• and
• burying in the trench a second semiconductor layer for applying to the silicon substrate a second stress in a second direction opposite to the first direction.

A method of manufacturing a semiconductor device comprising:

• forming a gate electrode over a silicon substrate;
• forming on a side wall of the gate electrode a sidewall insulating film of silicon nitride which applies to the silicon substrate a first stress in a first direction parallel to a surface of the silicon substrate;
• etching the silicon substrate with the gate electrode and the sidewall insulating film as the mask to form a trench in the silicon substrate in a region where the silicon substrate is not covered by the gate electrode and the sidewall insulating film;
• and
• burying in the trench a semiconductor layer which applies to the silicon substrate a second stress in a second direction opposite to the first direction.