Semiconductor device and method of forming a semiconductor device

A method of forming a semiconductor device arrangement comprising a semiconductor device, the method comprising the steps of:

• providing a semiconductor substrate of a first conductivity type;
• providing a semiconductor layer of the first conductivity type over the semiconductor substrate;
• forming a first current electrode region of the first conductivity type in the semiconductor layer, extending from a first surface of the semiconductor layer, the semiconductor substrate forming a second current electrode region of the semiconductor device;
• and
• forming at least one floating region of a second conductivity type in the semiconductor layer;
• forming an injector device comprising an IGBT device in the semiconductor layer, the injector device comprising an injector region of the second conductivity type formed in the semiconductor layer extending from the first surface, the injector device being arranged to inject charge carriers of the second conductivity type into the semiconductor layer and the at least one floating region in response to receiving an activation signal when the semiconductor device is turned on.