Nitride-based semiconductor device and method of manufacturing the same

A method of manufacturing a nitride-based semiconductor device, comprising steps of:

• forming a plurality of recess portions on a main surface of a substrate;
• growing a plurality of nitride-based semiconductor layers comprising first side surfaces of a (000-1) plane formed while growing starting from first side walls of said recess portions and second side surfaces formed while corresponding to said first side surfaces and growing starting from second side walls of said recess portions on said main surface of said substrate;
• and
• separating into chips by dividing said substrate formed with said nitride-based semiconductor layers into individual semiconductor devices on regions where said first side surfaces and said second side surfaces are opposed to each other.