US 2009/0267097 A1 · METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF

Abstract

A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Claims18

Dependent claims

A method for fabricating a photoelectric device of Group III nitride semiconductor, comprising steps of:

forming a first Group III nitride semiconductor layer on a substrate;
forming a patterned epitaxial-blocking layer on said first Group III nitride semiconductor layer;
forming a second Group III nitride semiconductor layer on said patterned epitaxial-blocking layer and on portions of said first Group III nitride semiconductor layer not covered by said epitaxial-blocking layer;
removing said patterned epitaxial-blocking layer from said first Group III nitride semiconductor layer and said second Group III nitride semiconductor layer;
forming a third Group III nitride semiconductor layer on said second Group III nitride semiconductor layer;
forming a conductive layer on said third Group III nitride semiconductor layer;
and
separating said third Group III nitride semiconductor layer and said conductive layer on said second Group III nitride semiconductor layer.

5 more elements

Dependencies are inferred from the claim text.

Method of fabricating photoelectric device of group iii nitride semiconductor and structure thereof

Life of this patent

Method of fabricating photoelectric device of group iii nitride semiconductor and structure thereof

Life of this patent

Abstract

Claims18