Plasma generating device and film deposition method in which the plasma generating device is used

A plasma generating device provided with a cylindrical electrode in the vacuum inside thereof, the plasma generating device introducing gas into the cylindrical electrode and applying a direct-current negative voltage to the cylindrical electrode as a plasma generating voltage, comprising:

• a gas introducing device capable of selecting gas corresponding to a type of film deposition and introducing the selected gas into the cylindrical electrode;
• and
• a pressure control device capable of controlling an internal pressure of the cylindrical electrode depending on a type of film deposition, wherein
• the gas is selected by the gas introducing device and the internal pressure of the cylindrical electrode is controlled by the pressure control device, so that:
• the plasma generating device can be used as a PVD device for forming a film on a surface of a film deposition target by sputtering a material constituting the cylindrical electrode through the introduction of non-reactive gas and low-pressure control;
• the plasma generating device can be used as a reactive PVD device for forming the film on the surface of the film deposition target by sputtering the material constituting the cylindrical electrode through the introduction of reactive gas and low-pressure control;
• and
• the plasma generating device can be used as a plasma CVD device for forming a carbon film on the surface of the film deposition target through the introduction of gas for carbon film deposition and high-pressure control.