Interconnect structure and method for fabricating the same
AssigneePanasonic Corporation
InventorNobuo AOI
Life of this patent
Estimating the term…
Abstract
An interconnect structure includes: an interlayer insulating film formed on a lower metal layer; a contact hole formed in the interlayer insulating film to expose the lower metal layer; a plurality of carbon nanotubes formed on a bottom of the contact hole; an wiring metal filled in the contact hole to fill gap between the plurality of carbon nanotubes; and an upper wiring formed above the contact hole. A Ti layer is formed between the plurality of carbon nanotubes and the upper wiring.
Claims18
An interconnect structure comprising:
- an interlayer insulating film formed on a lower metal layer;
- a contact hole formed in the interlayer insulating film to expose the lower metal layer;
- a plurality of carbon nanotubes formed on a bottom of the contact hole;
- an wiring metal filled in the contact hole to fill gap between the plurality of carbon nanotubes;
- and
- an upper wiring formed above the contact hole, wherein
- an upper metal layer made of a Ti layer at the bottom of Cu wiring is formed between the plurality of carbon nanotubes and the upper wiring.
An interconnect structure comprising:
- an interlayer insulating film formed on a lower metal layer;
- a contact hole formed in the interlayer insulating film to expose the lower metal layer;
- a lower metal layer made of a Ti layer on Cu wiring and formed on at least a bottom of the contact hole;
- a plurality of carbon nanotubes formed on the lower metal layer on the bottom of the contact hole;
- and
- an wiring metal filled in the contact hole to fill gap between the plurality of carbon nanotubes.
A method for fabricating an interconnect structure comprising:
- (a) forming an interlayer insulating film on a lower metal layer;
- (b) forming a contact hole in the interlayer insulating film to expose the lower metal layer;
- (c) forming a plurality of carbon nanotubes on a bottom of the contact hole, and filling with an wiring metal in the contact hole to fill gap between the plurality of carbon nanotubes;
- and
- (d) forming an upper wiring above the contact hole after the formation (c);
- wherein
- an upper metal layer made of a Ti layer at the bottom of Cu wiring is formed between the plurality of carbon nanotubes and the upper wiring.
A method for fabricating an interconnect structure comprising:
- (a) forming an interlayer insulating film on a lower metal layer;
- (b) forming a contact hole in the interlayer insulating film to expose the lower metal layer;
- (c) forming a lower metal layer made of a Ti layer on Cu wiring on at least a bottom of the contact hole;
- and
- (d) forming a plurality of carbon nanotubes on the lower metal layer on the bottom of the contact hole, and then filling with an wiring metal in the contact hole to fill gap between the plurality of carbon nanotubes.
Dependencies are inferred from the claim text.