Method of manufacturing semiconductor device and substrate processing apparatus

A method of manufacturing a semiconductor device, comprising:

• (a) loading a substrate into a process chamber, wherein the substrate has at least a silicon exposure surface and an exposure surface of silicon oxide film or silicon nitride film on a substrate surface;
• (b) selectively forming a film on the silicon exposure surface of the substrate by supplying at least a first process gas containing silicon and a second process gas for etching into the process chamber at a first flow rate under conditions that pressure inside the process chamber is at a first pressure and the substrate inside the process chamber is heated to a first temperature;
• and
• (c) removing silicon nuclei on the silicon oxide film or the silicon nitride film under conditions that the pressure inside the process chamber is made higher than the first pressure, or the second process gas is supplied at a flow rate higher than the first flow rate, or the temperature of the substrate is lower than the first temperature and lower than a pyrolysis temperature of the first process gas,
• wherein the operation (b) and the operation (c) are performed at least one or more times.

A substrate processing apparatus comprising:

• a process chamber accommodating a substrate;
• a heating mechanism heating the substrate;
• a gas supply unit supplying a process gas into the process chamber in order to form a predetermined film;
• a gas exhaust unit exhausting atmosphere inside the process chamber by making the inside of the process chamber to a predetermined pressure;
• and
• a control unit controlling the heating mechanism, the gas supply unit, and the gas exhaust unit, so that a film is selectively formed on a silicon exposure surface of the substrate by supplying at least a first process gas containing silicon and a second process gas for etching into the process chamber under conditions that pressure inside the process chamber is at a first pressure and the substrate inside the process chamber is heated to a first temperature, and silicon nuclei on silicon oxide film or silicon nitride film are removed under conditions that the pressure inside the process chamber is made higher than the first pressure, or the temperature of the substrate inside the process chamber is higher than the first temperature, or a third process gas having a stronger etchability than the second process gas is supplied.