Method for Fabricating Fine Pattern in Photomask

A method for fabricating a fine pattern in a photomask, comprising:

• forming a light shielding layer over a substrate;
• forming a first resist layer pattern having a layout over the light shielding layer to expose a portion of the light shielding layer with a first critical dimension;
• forming a groove by etching the portion of the light shielding layer exposed by the first resist layer pattern to a first depth;
• exposing an upper surface of the light shielding layer formed by removing the first resist layer pattern;
• forming a second resist layer pattern having a layout identical to that of the first resist layer pattern to expose a portion of the exposed light shielding layer at a position moved from the position of the first resist layer pattern by a distance less than the first critical dimension;
• and
• forming a light shielding layer pattern by etching the portion of the light shielding layer exposed by the second resist layer pattern to a second depth to expose the substrate with a second critical dimension which is smaller than the first critical dimension.

A method for fabricating a fine pattern in a photomask, comprising:

• forming a light shielding layer over a substrate;
• forming a first resist layer pattern over the light shielding layer to expose a portion of the light shielding layer;
• patterning the first resist layer pattern that exposes the light shielding layer with a first critical dimension by first electron beam to expose the first resist layer on the basis of a first position;
• forming a groove by etching the portion of the light shielding layer exposed by the first resist layer pattern to a first depth;
• exposing an upper surface of the light shielding layer formed with the groove by removing the first resist layer pattern;
• forming a second resist layer pattern over the exposed upper surface of the light shielding layer;
• forming a second resist layer pattern that exposes a portion of the bottom of the groove by a second electron beam to expose the second resist layer at a second position which is spaced from the first position by a distance less than the first critical dimension;
• and
• forming a light shielding layer pattern by etching the portion of the light shielding layer exposed by the second resist layer pattern to a second depth so that the substrate is exposed with a second critical dimension which is smaller than the first critical dimension.