Magentic junction memory array
AssigneeSeagate Technology LLC
InventorsHaiwen Xi, Song S. Xue
Life of this patent
Estimating the term…
Loading patent…
AssigneeSeagate Technology LLC
InventorsHaiwen Xi, Song S. Xue
Estimating the term…
A magnetic junction memory array and methods of using the same are described. The magnetic junction memory array includes a plurality of electrically conductive word lines extending in a first direction, a plurality of electrically conductive bit lines extending in a second direction and forming a cross-point array with the plurality of electrically conductive word lines, and a memory cell proximate to, at least selected, cross-points forming a magnetic junction memory array. Each memory cell includes a magnetic pinned layer electrically between a magnetic bit and an isolation transistor. The isolation transistor has a current source and a gate. The current source is electrically coupled to the cross-point bit line and the gate is electrically coupled to the cross-point word line. An electrically conductive cover layer is disposed on and in electrical communication with the magnetic bits.
A magnetic junction memory array, comprising:
A memory writing apparatus comprising:
A method comprising;
Dependencies are inferred from the claim text.