Process gas introducing mechanism and plasma processing device

A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising:

• a chamber accommodating therein the substrate to be processed;
• a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar;
• a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber;
• and
• a mounting table for mounting thereon the substrate to be processed provided in the chamber,
• wherein, given that an inner diameter of the bell jar is D and a distance from a ceiling portion of a central portion of the bell jar to the mounting table is H1, a flatness K1 defined by a ratio D/H1 is in the range of 0.90˜3.85,
• wherein the plasma processing apparatus further comprises a mask, made of a dielectric material, for covering the mounting table, and
• wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height.

A plasma processing apparatus for performing a plasma processing on a substrate to be processed, the apparatus comprising:

• a chamber accommodating therein the substrate to be processed;
• a plasma generation unit, having a bell jar and an antenna, for producing a plasma inside the bell jar, wherein the bell jar made of a dielectric material is provided at an upper part of the chamber to communicate therewith and the antenna is coiled around an outer side of the bell jar to generate an induced electric field in the bell jar;
• a processing gas introducing mechanism, provided between the plasma generation unit and the chamber, for introducing a processing gas for producing a plasma into a processing space formed by the plasma generation unit and the chamber;
• a mounting table for mounting thereon the substrate to be processed provided in the chamber;
• and
• a mask, made of a dielectric material, for covering the mounting table and mounting thereon the substrate to be processed, and
• wherein the mask has a first region where the substrate to be processed is mounted and a second region around the first region, and the first and the second region are configured to have a same height.