Photovoltaic Devices and Associated Methods

A method of forming an electronic device, comprising:

• coating a layer of diamond-like carbon onto substrate;
• doping the layer of diamond-like carbon with an N dopant to form an N-type material layer;
• applying a layer of a P-type material to the diamond-like carbon layer, wherein the P-type material includes copper, gallium, indium and at least one member selected from the group consisting of selenide and sulfide;
• and
• applying a first electrode to the layer of P-type material layer opposite to the N-type material layer.

An electronic device, comprising:

• a charge carrier separation layer including:
• a layer of a P-type material comprising a first component selected from the group consisting of at least one of copper, gold, and silver, a second component selected from the group consisting of at least one of aluminum, gallium, and indium, and a third component selected from the group consisting of at least one of sulfur, selenium, tellurium, and oxygen, wherein the P-type material is tetrahedrally bonded;
• a layer of an N-type material adjacent to the P-type material, the N-type material including diamond-like carbon doped with an N dopant;
• and
• a first electrode adjacent to the layer of P-type material of the charge carrier separation layer opposite to the N-type material.