Resistance change element and method of manufacturing the same
AssigneeFujitsu Limited
InventorHideyuki Noshiro
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Abstract
In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a lower electrode (ground-side electrode) of the resistance change element is formed of a transition metal such as Ni, and an upper electrode (positive polarity-side electrode) is configured of a noble metal such as Pt. In addition, a transition metal oxide film between the lower electrode and the upper electrode is formed of an oxide film (NiOx film) of a transition metal that is of the same kind as the transition metal constituting the lower electrode, for example.
Claims12
A resistance change element storing data by utilizing change in a resistance value, comprising:
- a ground-side electrode made of a transition metal;
- a positive polarity-side electrode made of any one of a noble metal and a noble metal oxide;
- and
- a transition metal oxide film disposed between the ground-side electrode and the positive polarity-side electrode.
A method of manufacturing a resistance change element, comprising:
- forming a transition metal film above a semiconductor substrate;
- forming a transition metal oxide film on the transition metal film;
- and
- forming a noble metal film made of any one of a noble metal and a noble metal oxide on the transition metal oxide film.
Dependencies are inferred from the claim text.