Semiconductor integrated circuit device
AssigneeKabushiki Kaisha Toshiba
InventorsKazuyuki MASUKAWA, Koji HASHIMOTO, Hidefumi MUKAI, Kosuke YANAGIDAIRA
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Abstract
A semiconductor integrated circuit device includes a plurality of contact layers located between two lines running in parallel in a first direction. Each of the contact layers has a structure in which an upper contact and a lower contact are coupled together. The plurality of contact layers are arranged zigzag along the first direction, and coupling portions of the upper contact and the lower contact are displaced from the center of the upper contact in a second direction perpendicular to the first direction.
Claims16
A semiconductor integrated circuit device comprising a plurality of contact layers located between two lines running in parallel in a first direction, each of the contact layers having a structure in which an upper contact and a lower contact are coupled together,
- wherein the plurality of contact layers are arranged zigzag along the first direction, and coupling portions of the upper contact and the lower contact are displaced from the center of the upper contact in a second direction perpendicular to the first direction.
A semiconductor integrated circuit device comprising a plurality of contact layers located between two lines running in parallel in a first direction, each of the contact layers having a structure in which an upper contact and a lower contact are coupled together,
- wherein the plurality of contact layers are arranged zigzag along the first direction, and the bottom of the upper contact is located higher than the upper surfaces of the two lines running in parallel in the first direction.
Dependencies are inferred from the claim text.