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US 2009/0256264 A1Published application
Semiconductor structure and method of making the same
AssigneeNanya Technology Corporation
InventorsYinan Chen, Hsien-Wen Liu, Tzu-Ching Tsai
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Abstract
A semiconductor device is provided. An amorphous silicon layer that acts as a UV blocking layer replaces a conventional silicon-rich oxide (SRO) layer or the super silicon-rich oxide (SSRO) layer. By doing this, the process window is increased. In addition, silicon nitride sidewall spacer is formed inside the contact hole to prevent charge loss.
Claims11
A semiconductor structure comprising:
- a substrate comprising a conductive layer;
- a dielectric layer positioned on the conductive layer, wherein the dielectric layer comprises at least an amorphous silicon layer;
- and
- a contact plug positioned in the dielectric layer.
1 more element
Dependencies are inferred from the claim text.