Capacitor, Chip Comprising the Capacitor, and Method for Producing the Capacitor

A capacitor, comprising:

• a substrate with a doped area of said substrate forming a first electrode of said capacitor;
• a trench arranged in said doped area of said substrate, said trench forming a second electrode of said capacitor;
• at least one dielectric layer arranged between said trench and said doped area for electrically insulating said trenches from said doped area;
• and
• at least one trench contact structure for electrically connecting said at least one trench, wherein a midpoint of an open area of said substrate contact structure has an excentricate with regard to a midpoint of an open area of said trench.

An integrated circuit comprising:

• a substrate with a doped area, said doped area forming a first electrode of said capacitor;
• a plurality of trenches arranged in said doped area of said substrate, at least one of said plurality of trenches forming a second electrode of said capacitor;
• and
• at least one dielectric layer arranged between each of said plurality of said trenches and said doped area for electrically insulating said trenches from said doped area;
• wherein said plurality of trenches are concentric trenches with a concentric open area.

A chip, comprising:

• a substrate;
• an integrated circuit integrated into said substrate;
• an integrated capacitor integrated into said substrate, the integrated capacitor comprising:
• a doped area of said substrate that forms a first electrode of said capacitor;
• a plurality of trenches arranged in said doped area of said substrate, said plurality of trenches forming a second electrode of said capacitor;
• an dielectric layer arranged between each of said plurality of said trenches and said doped area for electrically insulating said trenches from said doped area;
• and
• at least one substrate contact structure for electrically connecting said doped area,
• wherein said doped area comprises first open areas arranged between neighboring trenches of said plurality of trenches and at least one second open area arranged between neighboring trenches of said plurality of trenches, wherein said at least one second open area is arranged below said at least one substrate contact, and wherein a shortest first distance between neighboring trenches separated by said first open areas is shorter than a shortest second distance between neighboring trenches separated by said at least one second open area.

A method for producing a capacitor, the method comprising:

• forming a trench in a semiconductor substrate;
• forming a first electrode by doping said semiconductor substrate;
• forming a plurality of trenches in the semiconductor substrate;
• forming an electrically insulating layer within said plurality of trenches;
• filling the plurality of trenches with an electrically conductive material, the electrically insulating material separating the electrically conductive material from the doped area;
• forming a first substrate contact structure for electrically contacting the first electrode, wherein the plurality of trenches are arranged in such a manner that said doped area comprises first open areas and at least one second open area arranged between neighboring trenches of said plurality of trenches, wherein said at least one second open area is arranged below said at least one substrate contact structure and wherein the shortest first distance between neighboring trenches is separated by said first cross-sections is shorter than a shortest second distance between neighboring trenches separated by said at least one second cross-section.