US 2009/0256235 A1 · Semiconductor device

Abstract

A semiconductor device (200) includes: an electrical fuse (100) including: a lower layer interconnect (120) formed on a substrate; a via (130) provided on the lower layer interconnect (120) so as to be connected to the lower layer interconnect (120); and an upper layer interconnect (110) provided on the via (130) so as to be connected to the via (130), the electrical fuse being cut, in a state after being cut, through formation of a flowing-out portion, the flowing-out portion being formed when an electrical conductor forming the upper layer interconnect (110) flows outside the upper layer interconnect (110); and a guard upper layer interconnect (152) (conductive heat-absorbing member) formed in at least the same layer as the upper layer interconnect (110), for absorbing heat generated in the upper layer interconnect (110).

Claims8

Dependent claims

A semiconductor device, comprising:

a substrate;
an electrical fuse including:
a lower layer interconnect formed on the substrate;
a via provided on the lower layer interconnect so as to be connected to the lower layer interconnect;
and
an upper layer interconnect provided on the via so as to be connected to the via,
the electrical fuse being cut, in a state after being cut, through formation of a flowing-out portion, the flowing-out portion being formed when an electrical conductor forming the upper layer interconnect flows outside the upper layer interconnect;
and
a conductive heat-absorbing member formed in at least the same layer as the upper layer interconnect, for absorbing heat generated in the upper layer interconnect.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims8