Semiconductor device and fabrication method for the same
AssigneePanasonic Corporation
InventorNobuyoshi TAKAHASHI
Life of this patent
Estimating the term…
Abstract
The semiconductor device includes: memory cells each having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a second conductive film formed one on the other with a first interface film therebetween; and a diode having a diode electrode made of the second conductive film and a second interface film as a silicon oxide film formed at the interface between the diode electrode and a substrate. The first interface film has a thickness with which electrical connection between the lower electrode and the upper electrode is maintained, and the second interface film has a thickness with which epitaxial growth between the substrate and the diode electrode is inhibited.
Claims9
A semiconductor device comprising:
- memory cells formed in a memory cell region of a substrate, each of the memory cells having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a second conductive film formed one on the other with a first interface film as a silicon oxide film interposed therebetween;
- and
- a diode formed in a diode region of the substrate, the diode including a diode electrode made of the second conductive film and a second interface film as the silicon oxide film formed at the interface between the diode electrode and the substrate,
- wherein the first interface film has a thickness with which electrical connection between the first lower electrode and the first upper electrode is maintained, and the second interface film has a thickness with which epitaxial growth between the substrate and the diode electrode is inhibited.
A fabrication method for a semiconductor device, comprising the steps of:
- (a) forming a first insulating film on a memory cell region of a substrate;
- (b) forming a second insulating film on a diode region of the substrate;
- (c) forming a first conductive film on the first insulating film and the second insulating film;
- (d) selectively removing the first conductive film and the first insulating film using a mask insulating film to form a first opening in the memory cell region, and selectively removing the first conductive film and the second insulating film using the mask insulating film to form a second opening exposing the substrate in the diode region;
- (e) forming a bit line diffusion layer in a region of the substrate exposed in the first opening in the memory cell region;
- (f) forming a bit line insulating film filling the first opening;
- (g) removing the mask insulating film and forming a silicon oxide film on the first conductive film and on a region of the substrate exposed in the second opening in the memory cell region and the diode region;
- and
- (h) forming a second conductive film on the entire surface in the memory cell region and the diode region,
- wherein in the step (g), after removal of the mask insulating film, the silicon oxide film is formed by ozone cleaning.
Dependencies are inferred from the claim text.