Gate Structure of Semiconductor Device
AssigneeHynix Semiconductor Inc.
InventorsYoung Bog Kim, Jun Soo Chang, Min Yong Lee, Yong Seok Eun
Life of this patent
Estimating the term…
Abstract
A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.
Claims1
A gate structure of a semiconductor device, comprising:
- a silicon substrate having a field oxide film;
- a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate;
- a thermal oxide film formed on a side of the first gate conductive film;
- a plurality of trenches formed between the gates;
- a second gate oxide film formed on an interior wall of each trench;
- and
- a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.
Dependencies are inferred from the claim text.