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US 2009/0256180 A1Published application
Standard cell having compensation capacitance
AssigneeElpida Memory, Inc.
InventorShoji Azuma
Life of this patent
Estimating the term…
Abstract
A standard cell includes a capacity element which is made up of a first well diffusion layer into which a first conductive impurity is diffused in a region from a surface of a substrate to a predetermined depth, an insulation film which is provided on the first well diffusion layer, and a first dummy pattern which is provided on the insulation film.
Claims20
A standard cell, comprising:
- a first well diffusion layer into which a first conductive impurity is diffused;
- an insulation film provided on said first well diffusion layer;
- a first wiring for applying a predetermined electric potential to said first well diffusion layer, said first wiring being connected with said first well diffusion layer via a first contact passing through said insulation film;
- a first dummy pattern provided on said insulation film;
- and
- a second wiring for applying an electric potential different from said predetermined electric potential to said first dummy pattern, wherein
- said standard cell includes a first capacity element which is made up of said first dummy pattern, said insulation film and said first well diffusion layer.
4 more elements
A semiconductor device, comprising:
- a first well diffusion layer made of a first conductive type;
- first and second active patterns, which are made of said first conductive type, for respectively supplying a first electric potential to said first well diffusion layer, said first and second active patterns being provided in said first diffusion layer;
- and
- a first capacity provided in said first well diffusion layer, one terminal of said first capacity being supplied with said first electric potential, wherein
- said first capacity is configured to be interposed between said first and second active patterns.
2 more elements
Dependencies are inferred from the claim text.