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US 2009/0256175 A1Published application
Method of doping transistor comprising carbon nanotube, method of controlling position of doping ion, and transistors using the same
AssigneesSamsung Electronics Co., Ltd., Sungkyunkwan University Foundation for Corporate Collaboration
InventorsUn-jeong Kim, Young-hee Lee, Jae-young Choi, Woo-jong Yu
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Abstract
Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.
Claims20
A method of doping a carbon nanotube (CNT) of a field effect transistor comprising:
- providing a source, a drain, the CNT as a channel between the source and the drain, and a gate on a substrate;
- applying a first voltage to the gate;
- and
- adsorbing ions on a surface of the CNT.
1 more element
Dependencies are inferred from the claim text.