Thin film transistor and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsMin-Kyu Kim, Tae-Kyung Ahn, Jae-Kyeong Jeong
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Abstract
A thin film transistor, including a transparent channel pattern, a transparent gate insulating layer in contact with the channel pattern, a passivation film pattern disposed on the channel pattern, a source/drain coupled to the channel pattern through a via hole in the passivation film pattern, and a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern, wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).
Claims17
A thin film transistor, comprising:
- a transparent channel pattern;
- a transparent gate insulating layer in contact with the channel pattern;
- a passivation film pattern disposed on the channel pattern;
- a source/drain coupled to the channel pattern through a via hole in the passivation film pattern;
- and
- a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern,
- wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG).
A method of manufacturing a thin film transistor, comprising:
- forming a transparent channel pattern on a substrate;
- forming a transparent gate insulating layer in contact with the channel pattern;
- forming a passivation film pattern on the channel pattern;
- forming a source/drain coupled to the channel pattern through a via hole in the passivation film pattern;
- and
- forming a gate facing the channel pattern, the gate insulating layer interposed between the gate and the channel pattern,
- wherein the passivation film pattern includes at least one of polyimide, photoacryl, and spin on glass (SOG) materials.
Dependencies are inferred from the claim text.