Piezoelectric film forming method
OwnerTakayuki NAONO, Takamichi FUJIIinventors
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Abstract
When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively. 400=Ts (° C.)=550 (1) −10=Vsub (V)<100 (2)
Claims4
A film forming method for forming a piezoelectric film of one or more types of perovskite oxides represented by General Expression (P) below on a substrate by sputtering using plasma, wherein film forming is performed under a film forming condition in which a film forming temperature Ts (° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively.
- AaBbO3 (P)
- (where, A is at least one type of A-site element containing Pb, B is at least one type of B-site element selected from a group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O is an oxygen element. Typically, a=1.0 and b=1.0, but these values may deviate from 1.0 within a range in which a perovskite structure is obtainable.)
- 400=Ts (° C.)=550 (1)
- −10=Vsub (V)<100 (2)
Dependencies are inferred from the claim text.