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US 2009/0253273 A1Published application
Method of heat-treating semiconductor
AssigneeHightec Systems Corporation
InventorsNaoki Sano, Toshiyuki Sameshima
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AssigneeHightec Systems Corporation
InventorsNaoki Sano, Toshiyuki Sameshima
Estimating the term…
The present invention relates to a method of heat-treating a semiconductor, and the object is to enable heat-treating to a semiconductor or semiconductor device in a short period time and to obtain a stable and high reforming effect. The present invention is a method in which carbon or a layer including carbon is provided as a light absorbing layer, and a semiconductor material as a heat-treating target layer or semiconductor device contacting the heat absorbing layer directly or through a heat transfer layer of 5 nm-100 μm in thickness is heat-treated, and the light source to be used is a semiconductor laser light of wavelength of 600 nm-2 μm, and this semiconductor laser light is caused to continuously irradiate and sweep the surface of the heat-treating target material. The light source can be easily made to output high power, and heat-treating at a high speed and with low energy consumption is realized.
A method of heat-treating a semiconductor in which a semiconductor laser light in a range of wavelength of 600 nm-2 μm is caused to irradiate a heating layer constituted of a carbon layer or layer including carbon that produces heat by absorbing light energy, to cause the heating layer to produce heat to heat-treat a semiconductor material contacting the heating layer directly or through a heat-transfer layer of 5 nm-100 μm in thickness,
A method of heat-treating a semiconductor in which a semiconductor laser light in a range of wavelength of 600 nm-2 μm is caused to irradiate a heating layer constituted of a carbon layer or layer including carbon that produces heat by absorbing light energy, to cause the heating layer to produce heat to heat-treat a semiconductor material contacting the heating layer directly or through a heat-transfer layer of 5 nm-100 μm in thickness,
A method of heat-treating a semiconductor in which a semiconductor laser light in a range of wavelength of 600 nm-2 μm is caused to irradiate a heating layer constituted of a carbon layer or layer including carbon that produces heat by absorbing light energy, to cause the heating layer to produce heat to heat-treat a semiconductor material contacting the heating layer directly or through a heat-transfer layer of 5 nm-100 μm in thickness,
A method of heat-treating a semiconductor, wherein a semiconductor laser light in a range of wavelength of 600 nm-2 μm is caused to irradiate a heating layer constituted of a carbon layer or layer including carbon that produces heat by absorbing light energy, to cause the heating layer to produce heat to heat-treat a semiconductor material through an impurities containing layer of 5 nm-100 μm in thickness contacting the heating layer, and the semiconductor laser light is caused to irradiate a same place of the heating layer continuously for a time period of 100 ns-100 ms.
Dependencies are inferred from the claim text.