Semiconductor Device Having Multiple Fin Heights
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chen-Nan Yeh, Yu-Rung Hsu
Life of this patent
Estimating the term…
Abstract
A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist material. Subsequent etching steps form corresponding trenches in the underlying substrate. In yet another embodiment, multiple masking layers are used to etch trenches of different heights separately. A dielectric region may be formed along the bottom of the trenches to isolate the fins by performing an ion implant and a subsequent anneal.
Claims20
A method of forming fins for a semiconductor device, the method comprising:
- providing a substrate;
- forming a plurality of trenches in the substrate, thereby forming fins between adjacent trenches, each of the plurality of trenches having a first depth;
- and
- forming a dielectric region along a bottom of each of the plurality of trenches, the dielectric region in a first set of adjacent trenches having a thickness different than the dielectric region in a second set of adjacent trenches.
A method of forming fins for a semiconductor device, the method comprising:
- providing a substrate;
- forming one or more mask layers over the substrate;
- patterning the one or more mask layers to form a first set of adjacent trenches and a second set of adjacent trenches in the one or more mask layers, the first set of adjacent trenches having a first depth and the second set of adjacent trenches having a second depth, the second depth being different than the first depth;
- simultaneously transferring the pattern of the first set of adjacent trenches and the second set of adjacent trenches in the one or more mask layers into the substrate, thereby forming a third set of adjacent trenches and a fourth set of adjacent trenches corresponding to the first set of adjacent trenches and the second set of adjacent trenches, respectively;
- and
- forming a dielectric layer along a bottom of the first set of adjacent trenches and the second set of adjacent trenches, the dielectric layer along the bottom of the first set of adjacent trenches and the second set of adjacent trenches being substantially the same.
A method of forming fins for a semiconductor device, the method comprising:
- providing a substrate;
- forming one or more mask layers over the substrate;
- patterning the one or more mask layers to form a first set of adjacent trenches having a first depth and a second set of adjacent trenches having a second depth, the second depth being greater than the first depth;
- etching the one or more mask layers to expose portions of the substrate along a bottom of the second set of adjacent trenches, the substrate not being exposed along a bottom of the first set of adjacent trenches;
- etching the one or more mask layers to expose portions of the substrate along the bottom of the first set of adjacent trenches while etching exposed portions of the substrate along the bottom of the second set of adjacent trenches;
- and
- etching exposed portions of the substrate along the bottom of the first set of adjacent trenches and the second set of adjacent trenches;
- and
- forming a dielectric layer along the bottom of the first set of adjacent trenches and the second set of adjacent trenches, the dielectric layer along the bottom of the first set of adjacent trenches and the second set of adjacent trenches being substantially the same, thereby forming a first fin between adjacent ones of the first set of adjacent trenches and a second fin between adjacent ones of the second set of adjacent trenches.
Dependencies are inferred from the claim text.