PIN Diode with Improved Power Limiting
AssigneeM/A-Com, Inc.
InventorsJoel Lee Goodrich, James Joseph Brogle
Life of this patent
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Abstract
A PIN diode comprising an N-type substrate comprising a cathode of the PIN diode and having an intrinsic layer disposed upon the N-type substrate and having a top surface a P-type material disposed upon the top surface of the intrinsic layer comprising an anode of the PIN diode and a N-type material disposed over the sidewall of the cathode and over the sidewall and a portion of the top surface of the intrinsic material that is not occupied by the anode, wherein a horizontal gap is defined between the anode and the cathode through the intrinsic material, the gap being variable in width and/or the horizontal gap is less than the thickness of the intrinsic layer.
Claims15
A PIN diode comprising:
- an N-type substrate comprising a cathode of the PIN diode and having a sidewall;
- an intrinsic material disposed upon the N-type substrate and having a top surface and a sidewall;
- a P-type material disposed upon the top surface of the intrinsic layer comprising an anode of the PIN diode;
- and
- a N-type material disposed over the sidewall of the cathode and over the sidewall and a portion of the top surface of the intrinsic material that is not occupied by the anode;
- wherein a horizontal gap is defined between the anode and the cathode through the intrinsic material, the gap being variable in width.
A PIN diode comprising
- an N-type substrate having a sidewall;
- an intrinsic material disposed upon the N-type substrate and having a top surface and a sidewall;
- a P-type material disposed upon the top surface of the intrinsic layer;
- and
- a N-type material disposed over the sidewall of the cathode and over the sidewall and a portion of the top surface of the intrinsic material that is not occupied by the P-type material;
- wherein a horizontal gap is defined between the anode and the cathode through the intrinsic material, the horizontal gap being less than a vertical gap between the P-type material and the N-type substrate defined by the thickness of the intrinsic material and wherein the horizontal gap is less than the vertical gap.
Dependencies are inferred from the claim text.