Double mask self-aligned double patterning technology (sadpt) process
AssigneeLam Research Corporation
InventorsS. M. Reza Sadjadi, Lumin Li, Andrew R. Romano
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Abstract
A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.
Claims19
A method for patterning features over an etch layer, comprising:
- forming an organic mask layer over the etch layer;
- forming a silicon-containing mask layer over the organic mask layer;
- forming a patterned mask layer over the silicon-containing mask layer;
- etching the silicon-containing mask layer through the patterned mask layer;
- depositing a polymer over the etched silicon-containing mask layer;
- depositing a silicon-containing film over the polymer;
- planarizing the silicon-containing film;
- selectively removing the polymer leaving the silicon-containing film;
- and
- etching the organic mask layer.
A method for patterning features over an etch layer, comprising:
- forming an organic mask layer over the etch layer;
- forming a silicon-containing mask layer over the organic mask layer;
- forming a patterned mask layer over the silicon-containing mask layer;
- etching the silicon-containing mask layer through the patterned photo-resist mask;
- depositing a polymer over the etched silicon-containing mask layer, wherein the depositing a polymer comprises at least two cycles of a sidewall formation process, wherein each cycle comprises:
- a polymer deposition phase, wherein the polymer deposition phase comprises:
- providing a polymer deposition gas;
- forming a plasma from the deposition gas, while maintaining a temperature of less than 100° C.;
- and
- stopping the flow of the deposition gas;
- and
- a polymer sidewall shaping phase, wherein the polymer sidewall shaping phase comprises:
- providing a profile shaping gas different than the deposition gas;
- forming a plasma from the profile shaping gas, while maintaining a temperature of less than 100° C.;
- and
- stopping the flow of the profile shaping gas;
- depositing a silicon-containing film over the polymer;
- planarizing the silicon-containing film;
- selectively removing the polymer leaving the silicon-containing film;
- etching the organic layer;
- and
- etching the etch layer.
Dependencies are inferred from the claim text.