Method for increasing etch rate during deep silicon dry etch
AssigneeMicron Technology, Inc.
InventorsKyle Kirby, Swarnal Borthakur
Life of this patent
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Abstract
A method of increasing etch rate during deep silicon dry etch by altering the geometric shape of the etch mask is presented. By slightly altering the shape of the etch mask, the etch rate is increased in one area where an oval etch mask is used as compared to another areas where different geometrically-shaped etch masks are used even though nearly the same amount of silicon is exposed. Additionally, the depth of the via can be controlled by using different geometrically-shaped etch masks while maintaining virtually the same size in diameter for all the vias.
Claims8
A method for increasing etch rate during deep silicon dry etch, the method comprising:
- providing a silicon substrate;
- depositing an patterned etch mask with different geometrically shaped openings over the silicon substrate;
- wherein the different geometrically shaped openings in the patterned etch mask expose the same amount of silicon substrate surface area;
- and
- forming openings in the silicon substrate within the geometrically shaped openings, wherein the different geometrically shaped openings of the patterned etch mask result in differing rates of silicon etching in the silicon substrate over the same period of time.
A method for increasing etch rate during deep silicon dry etch, the method comprising:
- providing a silicon substrate having a front side and a back side;
- depositing a patterned etch mask with different geometrically shaped openings over the front side of the silicon substrate, wherein the different geometrically shaped openings in the patterned etch mask expose the same amount of silicon substrate surface area;
- forming openings in the silicon substrate within the geometrically shaped openings, wherein the different geometrically shaped openings of the patterned etch mask result in differing rates of silicon etching in the silicon substrate over the same period of time;
- and
- exposing the openings in the silicon substrate by etching the back side of the silicon substrate, wherein the surface area of exposure of the openings depends on the geometrical shape of the openings.
Dependencies are inferred from the claim text.