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US 2009/0215250 A1Published application
Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition
AssigneeApplied Materials, Inc.
InventorsKartik Santhanam, Manoj Vellaikal, Peter I. Porshnev, Majeed A. Foad
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Abstract
In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less.
Claims20
A process for fabricating a semiconductor device, comprising:
- forming a gate dielectric layer on a silicon substrate;
- forming a polycrystalline silicon gate layer on the gate dielectric layer;
- defining gate electrodes in said polycrystalline silicon gate layer;
- holding the silicon substrate on a support surface in a reactor chamber;
- introducing into the chamber a first process gas comprising more than 50% of helium and less than 50% of a dopant hydride gas, at a first flow rate;
- introducing into the chamber Argon gas at a second flow rate that is within a factor of 10 of said first flow rate;
- applying RF plasma source power to a toroidal plasma source of the chamber to generate a plasma from said first process gas and Argon gas;
- and
- coupling sufficient RF bias power to said wafer to generate a bias voltage on said wafer corresponding to a desired ion implantation depth profile.
6 more elements
A process for implanting a dopant impurity species into a semiconductor wafer by plasma immersion ion implantation, comprising:
- holding the semiconductor wafer on a wafer support surface in a reactor chamber;
- introducing into the chamber a first process gas comprising more than 50% of helium and less than 50% of a dopant hydride gas, at a first flow rate;
- introducing into the chamber Argon gas at a second flow rate that is within a factor of 10 of said first flow rate;
- applying RF plasma source power to a toroidal plasma source of the chamber to generate a plasma from said first process gas and Argon gas;
- and
- coupling sufficient RF bias power to said wafer to generate a bias voltage on said wafer corresponding to a desired ion implantation depth profile.
3 more elements
Dependencies are inferred from the claim text.