Back to results
US 2009/0215241 A1Published application
Manufacturing method for semiconductor devices
AssigneeKabushiki Kaisha Toshiba
InventorsKatsuhiro SATO, Takahito Nakajima
Life of this patent
Estimating the term…
Abstract
A polysilazane perhydride solution, prepared by dispesing polysilazane perhydride in a solvent containing carbon, is applied on a semiconductor substrate (1), thereby forming a coated film (6), which is heated, volatilizing solvent therein, thereby forming a polysilazane film (7), which is chemical-treated, so the polysilazane film (7) is changed to a silicon dioxide film (8).
Claims23
A manufacturing method for semiconductor devices, comprising:
- forming a trench in a semiconductor substrate;
- applying on the semiconductor substrate a polysilazane perhydride solution prepared by dispesing polysilazane perhydride in a solvent containing carbon, having a coated film formed thereon;
- heating the coated film, volatilizing solvent therein, forming a polysilazane film;
- chemical-treating the polysilazane film, changing the polysilazane film to a silicon oxide film;
- and
- heating the silicon oxide film, densifying the silicon oxide film.
3 more elements
A manufacturing method for semiconductor devices, comprising:
- forming a trench in a semiconductor substrate;
- applying on the semiconductor substrate a polysilazane perhydride solution prepared by dispesing polysilazane perhydride in a solvent containing carbon, having a coated film formed thereon;
- heating the coated film, volatilizing solvent therein, forming a polysilazane film;
- oxidation-treating the polysilazane film;
- chemical-treating the polysilazane film as oxidation-treated, changing the polysilazane film to a silicon oxide film;
- and
- heating the silicon oxide film, densifying the silicon oxide film.
4 more elements
Dependencies are inferred from the claim text.