US 2009/0215234 A1 · Semiconductor device, design method and structure

Abstract

A semiconductor device can include at least a first diffusion region formed by doping a semiconductor substrate and at least a second diffusion region formed by doping the semiconductor substrate that is separated from the first diffusion region by an isolation region. At least a first conductive line can comprise a semiconductor material formed over and in contact with the first diffusion region and the second diffusion region. A portion of the first conductive line in contact with the first diffusion region is doped to an opposite conductivity type as the first diffusion region. At least a second conductive line comprising a semiconductor material is formed in parallel with the first conductive line and over and in contact with the first diffusion region and the second diffusion region. A portion of the second conductive line can be in contact with the first diffusion region and doped to a same conductivity type as the first diffusion region. A portion of the second conductive line in contact with the second diffusion region can be doped to a same conductivity type as the second diffusion region.

Claims9

Dependent claims

A method of forming an integrated circuit, comprising the steps of:

forming doped semiconductor active areas disposed in a first direction;
forming at least a first semiconductor line disposed in a second direction different from the first direction, the first semiconductor line having a first section in contact with and oppositely doped to a first active area and a second section in contact with a second active area;
and
forming at least a second semiconductor line disposed in the second direction adjacent to the first semiconductor line, the second semiconductor line having a first section in contact with and doped the same as the first active area and a second section in contact with the second active area.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device, design method and structure

Life of this patent

Semiconductor device, design method and structure

Life of this patent

Abstract

Claims9