Method for reducing surface defects on patterned resist features
AssigneeTokyo Electron Limited
InventorJohn M. KULP
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorJohn M. KULP
Estimating the term…
A method is provided for post-processing lithographically patterned resists to reduce surface defects on a patterned resist feature. The method includes providing a substrate with a patterned resist feature containing surface defects with convex and concave regions, applying an acid solution to the patterned resist feature to form a surface acid layer on the patterned resist feature, heat-treating the patterned resist feature, where the heat-treating causes acid concentration in the convex regions and acid dispersion in the concave regions. The method further includes exposing the heat-treated patterned resist feature to a developing solution to preferentially remove resist material from the convex regions and form a trimmed patterned resist feature with reduced surface defects. According to one embodiment, the method further includes repeating the applying, heat-treating, and exposing at least once to further trim and reduce surface defects on the trimmed patterned resist feature.
A method for reducing surface defects in a patterned resist feature, the method comprising:
A method for reducing surface defects in a patterned resist feature, the method comprising:
A method for trimming a patterned resist feature, the method comprising:
Dependencies are inferred from the claim text.