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US 2009/0212447 A1Published application
Mark Structure for Coarse Wafer Alignment and Method for Manufacturing Such a Mark Structure
AssigneeASML Netherlands B.V.
InventorPatrick WARNAAR
Life of this patent
Estimating the term…
Abstract
A mark structure includes on a substrate, at least four lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
Claims16
A mark structure on a substrate, the mark structure comprising:
- a plurality of n lines, n being equal to at least four, the lines extending substantially parallel to each other in a first direction and having a pitch between each pair of lines selected from the plurality of lines, the pitch being directed in a second direction substantially perpendicular to the first direction,
- wherein the pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
A substrate for use in a process for producing a semiconductor device, the substrate having a mark structure comprising:
- a plurality of n lines, n being equal to at least four, the lines extending substantially parallel to each other in a first direction and having a pitch between each pair of lines selected from the plurality of lines, the pitch being directed in a second direction substantially perpendicular to the first direction,
- wherein the pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
A method for manufacturing a semiconductor device on a substrate, comprising:
- creating by a lithographic process a mark structure on the substrate, the mark structure comprising a plurality of n lines, n being equal to at least four, the lines extending substantially parallel to each other in a first direction and having a pitch between each pair of lines selected from the plurality of lines, the pitch being directed in a second direction substantially perpendicular to the first direction,
- wherein the pitch between each pair of selected lines differs from the pitch between each other pair of selected lines.
Dependencies are inferred from the claim text.