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US 2009/0212393 A1Published application
Method of manufacturing an electronic device including a pnp bipolar transistor
AssigneeTexas Instruments Deutschland GmbH
InventorAlfred Haeusler
Life of this patent
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Abstract
A method of manufacturing an electronic device including a PNP bipolar transistor comprises forming a collector in a substrate, depositing a base layer and an emitter layer on the substrate, and growing a nitride interface layer on the base layer as a base current modulation means, such that the nitride interface layer is arranged between the base layer and the emitter layer.
Claims15
A method of manufacturing an electronic device including a PNP bipolar transistor, the method comprising:
- forming a collector in a substrate;
- depositing a base layer and an emitter layer on the substrate;
- and
- growing a nitride interface layer on the base layer as a base current modulator, with the nitride interface layer arranged between the base layer and the emitter layer.
1 more element
An electronic device including a PNP bipolar transistor, the transistor comprising:
- a substrate with a collector formed therein;
- a base layer and an emitter layer provided on the substrate;
- and
- current modulation means for controlling a base current;
- wherein the current modulation means comprises a nitride interface layer arranged between the base and the emitter.
2 more elements
Dependencies are inferred from the claim text.