Mems device and method of making same

A MEMS device comprising:

• a glass wafer;
• a silicon sub-assembly coupled to the glass wafer, the silicon sub-assembly having at least one movable mechanical device;
• a conductive element positioned within the glass wafer and located proximate the silicon sub-assembly;
• a silicon pin includes a first end coupled to the conductive element and extends substantially perpendicular from the conductive element, the silicon pin further includes a second end located proximate an exterior surface of the glass wafer;
• and
• a P-N device located on the second end of the silicon pin and formed by selective diffusion, wherein the P-N device is created before the forming of the silicon pin and before the silicon pin is embedded into the glass wafer.

A method for making a MEMS device, the method comprising:

• making a silicon sub-assembly having at least one movable mechanical device;
• positioning a conductive element proximate the silicon sub-assembly;
• growing an epitaxial layer onto a silicon substrate to form at least one P-N device;
• etching a silicon pin from the silicon substrate, a first end of the silicon pin coupled to the conductive element and a second end of the silicon pin located distally therefrom;
• and
• after forming the P-N device and the silicon pin, embedding at least a portion of the silicon pin within a glass wafer while the at least a surface of the P-N device remains uncovered by the glass wafer.

A method for making a MEMS device, the method comprising:

• making a first glass wafer with appropriate cavities and conductive elements;
• making a silicon sub-assembly;
• bonding at least a portion of the silicon sub-assembly to the first glass wafer;
• growing an appropriately doped epitaxial layer into a silicon wafer to make a P-N device;
• etching the silicon wafer to form silicon pins, at least one silicon pin having the P-N device formed on a first end of the silicon pin;
• embedding the silicon pins into at least the first glass wafer;
• polishing off the non-embedded part of the silicon pins;
• and
• positioning a conductive element proximate the first glass wafer with the embedded silicon pins extending substantially perpendicular from the conductive element, the first end of the silicon pin having the P-N device located distally from a second end of the silicon pin coupled to the conductive element.

A method for making a MEMS device, the method comprising:

• making a first glass wafer with appropriate cavities and conductive elements;
• making a silicon sub-assembly;
• bonding at least a portion of the silicon sub-assembly to the first glass wafer;
• selectively diffusing impurities into a silicon wafer to make a P-N device;
• etching the silicon wafer to form silicon pins, at least one silicon pin having the P-N device formed on a first end of the silicon pin;
• embedding the silicon pins into at least the first glass wafer;
• polishing off the non-embedded part of the silicon pins;
• and
• positioning a conductive element proximate the first glass wafer with the embedded silicon pins extending substantially perpendicular from the conductive element, the first end of the silicon pin having the P-N device located distally from a second end of the silicon pin coupled to the conductive element.