CONTACT SCHEME FOR FINFET STRUCTURES WITH MULTIPLE FINs
AssigneeInternational Business Machines Corporation
InventorsLeland Chang, Wilfried E. Haensch, Meikei Ieong, Ghavam Shahidi, Huiling Shang
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Abstract
A FINFET-containing structure having multiple FINs that are merged together without source/drain contact pads or a local interconnect is provided. In accordance with the present invention, the inventive structure includes a plurality of semiconducting bodies (i.e., FINs) which extend above a surface of a substrate. A common patterned gate stack surrounds the plurality of semiconducting bodies and a nitride-containing spacer is located on sidewalls of the common patterned gate stack. An epitaxial semiconductor layer is used to merge each of the semiconducting bodies together.
Claims20
A semiconductor structure comprising:
- a plurality of parallel oriented semiconducting bodies which extend above a surface of a substrate;
- a common patterned gate electrode surrounding said plurality of parallel oriented semiconducting bodies;
- a nitride-containing spacer located on a sidewall of said common patterned gate electrode in a region in which said common patterned gate electrode intercrosses with at least one of said parallel oriented semiconducting bodies;
- and
- an epitaxial semiconductor layer that merges each of said parallel oriented semiconducting bodies together.
A semiconductor structure comprising:
- a plurality of parallel oriented semiconducting bodies which extend above a surface of a substrate;
- a common patterned gate electrode surrounding said plurality of parallel oriented semiconducting bodies;
- an insulating layer on all exposed surfaces of said common patterned gate electrode
- a nitride-containing spacer located on a sidewall of said common patterned gate electrode in a region in which said common patterned gate electrode intercrosses with at least one of said parallel oriented semiconducting bodies, wherein one edge of said nitride-containing spacer laterally abuts a portion of said insulating layer;
- and
- an epitaxial semiconductor layer that merges each of said parallel oriented semiconducting bodies together.
Dependencies are inferred from the claim text.