Semiconductor Device and Method for Manufacturing the Same
AssigneeHynix Semiconductor Inc.
InventorSung Hoon Lee
Life of this patent
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Abstract
Disclosed herein are a semiconductor device and a method for manufacturing the same. A method of manufacturing a semiconductor device includes forming a tunnel insulating layer, a first conductive layer, a dielectric layer, a second conductive layer and a gate electrode layer on a semiconductor substrate; patterning the gate electrode layer to expose the second conductive layer; forming a protective layer on a side wall of the gate electrode layer; and etching the exposed second conductive layer, the dielectric layer, and the first conductive layer to form a gate pattern.
Claims19
A semiconductor device comprising:
- a tunnel insulating layer, a conductive layer for a floating gate, a dielectric layer, a conductive layer for a control gate and a gate electrode layer formed on a semiconductor substrate;
- and
- a protective layer formed on a side wall of the gate electrode layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a tunnel insulating layer, a first conductive layer, a dielectric layer, a second conductive layer, and a gate electrode layer on a semiconductor substrate;
- patterning the gate electrode layer to expose the second conductive layer;
- forming a protective layer on a side wall of the gate electrode layer;
- and
- etching the exposed second conductive layer, the dielectric layer, and the first conductive layer to form a gate pattern.
A method for manufacturing a semiconductor device, the method comprising:
- forming a tunnel insulating layer, a first conductive layer, a dielectric layer, a second conductive layer, a gate electrode layer, and a hard mask pattern on a semiconductor substrate;
- performing an etching process using the hard mask pattern to pattern the gate electrode layer;
- forming a first protective layer on a side wall of the patterned gate electrode layer sufficient to prevent oxidation of the gate electrode layer and penetration of hydrogen ions into the gate electrode layer;
- forming a second protective layer on a surface of the first protective layer to prevent etching damage to the first protective layer during a process for etching the dielectric layer;
- and
- etching the exposed second conductive layer, the dielectric layer, and the first conductive layer to form a gate pattern.
Dependencies are inferred from the claim text.