Flash memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Young-Woo Park, Jung-Dal Choi, Chang-Seok Kang, Jin-Taek Park
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Abstract
A gate electrode line which extends in a second direction crossing a first direction on a substrate including an active region which is defined by a device isolation layer and extends in the first direction and a charge trap layer disposed between the active region and the gate electrode line, wherein a bottom surface of the gate electrode line disposed on the device isolation layer is lower than a top surface of the charge trap layer disposed on the active region and higher than a top surface of the active region.
Claims13
A flash memory device, comprising:
- a gate electrode line which extends in a second direction crossing a first direction on a substrate including an active region which is defined by a device isolation layer and extends in the first direction;
- and
- a charge trap layer disposed between the active region and the gate electrode line, wherein a bottom surface of the gate electrode line disposed on the device isolation layer is lower than a top surface of the charge trap layer disposed on the active region and higher than a top surface of the active region.
-20. (canceled)
Dependencies are inferred from the claim text.