Flash Memory Device and Method of Fabricating the Same
AssigneeHynix Semiconductor Inc.
InventorCha Deok Dong
Life of this patent
Estimating the term…
Abstract
The present invention relates to flash memory devices and a method of fabricating the same. In an aspect of the present invention, the flash memory device includes trenches formed in a semiconductor substrate and having a step at their lower portion, a tunnel insulating layer formed in an active region of the semiconductor substrate, first conductive layers formed on the tunnel insulating layer, an isolation layer gap-filling between the trenches and the first conductive layers, and a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers.
Claims20
A flash memory device, comprising:
- trenches formed in a semiconductor substrate and each having a step at its lower portion;
- a tunnel insulating layer formed in an active region of the semiconductor substrate;
- first conductive layers formed on the tunnel insulating layer;
- an isolation layer gap-filling between the trenches and the first conductive layers;
- and
- a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers.
A method of fabricating a flash memory device, the method comprising:
- providing a semiconductor substrate in which first trenches are formed in an isolation region and a stacked layer of a tunnel insulating layer and a first conductive layer is formed in an active region;
- etching the first conductive layer and the tunnel insulating layer by employing etch masks through which a part of the first conductive layer and a part of the first trenches are exposed on boundaries of the isolation region and the active region, thus reducing a width of the active region, and etching the semiconductor substrate including the first trenches to thereby form second trenches deeper than the first trenches;
- forming isolation layers to gap-fill between the first and second trenches and the first conductive layers;
- and
- forming a second conductive layer on the first conductive layer so that one side of second conductive layer is partially overlapped with the isolation layers.
Dependencies are inferred from the claim text.