Semiconductor device and a method for manufacturing the same
OwnerJi Ho Honginventor
Life of this patent
Estimating the term…
Abstract
Disclosed are embodiments relating to a semiconductor device and a method of manufacturing a semiconductor device that may prevent an increase of a dielectric effective constant of the IMD. In embodiments, a semiconductor device may include a substrate having a source/drain area, a gate electrode formed on the semiconductor substrate, a first inter-metal dielectric layer formed on the semiconductor substrate and having a first damascene pattern, a first barrier layer formed on the damascene pattern, a first metal line formed on the first barrier layer, and a first metal capping layer formed in the first damascene pattern.
Claims9
1-17. (canceled)
A semiconductor device comprising:
- a semiconductor substrate having a source/drain area;
- a gate electrode formed on the semiconductor substrate;
- a first inter-metal dielectric layer formed on the semiconductor substrate and having a first damascene pattern;
- a first barrier layer formed on the damascene pattern;
- a first metal line formed on the first barrier layer;
- and
- a first metal capping layer formed in the first damascene pattern.
Dependencies are inferred from the claim text.