US 2009/0212296 A1Published application

Method for manufacturing display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsTakafumi Mizoguchi, Mayumi Mikami, Yumiko Saito

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Abstract

A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.

Claims19

Dependent claims

A method for manufacturing a display device, comprising:

forming a first conductive film;
forming a first insulating film over the first conductive film;
forming a semiconductor film over the first insulating film;
forming an impurity semiconductor film over the semiconductor film;
forming a second conductive film over the impurity semiconductor film;
forming a first resist mask over the second conductive film;
first etching the first insulating film, the semiconductor film, the impurity semiconductor film, and the second conductive film by using the first resist mask so that at least a surface of the first conductive film is exposed;
second etching a portion of the first conductive film by side etching to form a gate electrode layer;
forming a second resist mask over the second conductive film;
third etching the second conductive film, the impurity semiconductor film, and a portion of the semiconductor film by using the second resist mask to form a source electrode layer, a drain electrode layer, a source region, a drain region, and a semiconductor layer so that a thin film transistor is formed;
removing the second resist mask;
forming a second insulating film to cover the thin film transistor;
forming an opening portion in the second insulating film so that the source electrode layer or the drain electrode layer is partially exposed;
and
selectively forming a pixel electrode in the opening portion and over the second insulating film,
wherein a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.

13 more elements

A method for manufacturing a display device, comprising:

forming a first conductive film;
forming a first insulating film over the first conductive film;
forming a semiconductor film over the first insulating film;
forming an impurity semiconductor film over the semiconductor film;
forming a second conductive film over the impurity semiconductor film;
forming a first resist mask having a depressed portion over the second conductive film;
first etching the first insulating film, the semiconductor film, the impurity semiconductor film, and the second conductive film by using the first resist mask so that at least a surface of the first conductive film is exposed;
second etching a portion of the first conductive film by side etching to form a gate electrode layer;
exposing the second conductive film overlapping with the depressed portion of the first resist mask by reducing the first resist mask in size and forming a second resist mask;
third etching the second conductive film, the impurity semiconductor film, and a portion of the semiconductor film by using the second resist mask to form a source electrode layer, a drain electrode layer, a source region, a drain region, and a semiconductor layer so that a thin film transistor is formed;
removing the second resist mask;
forming a second insulating film to cover the thin film transistor;
forming an opening portion in the second insulating film so that the source electrode layer or the drain electrode layer is partially exposed;
and
selectively forming a pixel electrode in the opening portion and over the second insulating film,
wherein a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.

13 more elements

Dependencies are inferred from the claim text.